symbol v ds v gs i dm t j , t stg symbol ty p max 47.5 62.5 74 110 r jl 37 50 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 8 gate-source voltage drain-source voltage -20 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v -4.5 -30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 2 1.44 -55 to 150 t a =70c i d -5.5 AO6407 features v ds (v) = -20v i d = -5 a r ds(on) < 45m ? (v gs = -4.5v) r ds(on) < 60m ? (v gs = -2.5v) r ds(on) < 85m ? (v gs = -1.8v) the AO6407 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. g d s tsop6 top view g d d s d d 1 2 3 6 5 4 p-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 6
AO6407 symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 100 na v gs(th) -0.3 -0.55 -1 v i d(on) -25 a 34 45 t j =125c 48 60 46 60 m ? 61 85 m ? g fs 714 s v sd -0.78 -1 v i s -2.2 a c iss 1180 pf c oss 176 pf c rss 142 pf r g 15 ? q g 13 nc q gs 1.2 nc q gd 3.6 nc t d(on) 13.2 ns t r 21 ns t d(off) 93 ns t f 46 ns t rr 43 ns q rr 21 nc body diode reverse recovery time body diode reverse recovery charge i f =-5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-1.8v, i d =-2a v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-5a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-16v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =-2.5v, i d =-4a i s =-1a,v gs =0v v ds =-5v, i d =-5a i f =-5a, di/dt=100a/ s v gs =0v, v ds =-10v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-5a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =2.0 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2 / 6
AO6407 typical electrical and thermal characteristics 0 5 10 15 20 25 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-1.5v -2.0v -2.5v -4.5v -8v -3.0v 0 2 4 6 8 10 0 0.5 1 1.5 2 -v gs (volts) figure 2: transfer characteristics -i d (a) 20 40 60 80 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =-4a, v gs =-2.5v i d =-3a, v gs =-1.8v i d =-5a, v gs =-4.5v 20 30 40 50 60 70 80 90 100 02468 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-1.8v v gs =-2.5v v gs =-4.5v i d =-5a 25c 125c www.freescale.net.cn 3 / 6
AO6407 typical electrical and thermal characteristics 0 1 2 3 4 5 03691215 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 400 800 1200 1600 2000 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 10ms 1ms 0.1s 1s 1 0s dc r ds(on) limited t j(max) =150c t a =25c v ds =-10v i d =-5a single pulse d=t o n / t t j,pk =t a +p dm .z t ja .r t ja r t ja =62.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 p s www.freescale.net.cn 4 / 6
symbols note: 1. lead finish: 150 microinches ( 3.8 um) min. thickness of tin/lead (solder) plated on lead 2. tolerance 0.100 mm (4 mil) unless otherwise specified 3. coplanarity : 0.1000 mm 4. dimension l is measured in gage plane 0.50 0.40 b 0.35 5 8 q 1 1 0.95 bsc e1 1.60 e l e 2.60 0.37 d c 2.70 0.10 2.00 1.80 2.80 --- 3.00 --- 2.90 0.13 3.10 0.20 dimensions in millimeters min a1 a2 a 0.00 1.00 1.00 max nom --- 1.10 0.10 1.15 1.25 --- e1 1.90 bsc tsop-6 package data recommended land pattern p n d l n note: p n - part number code. d - yaer and week code. l n - assembly lot code, fab and assembly location code. tsop-6 part no. code package marking description q seating plane gauge plane d7 AO6407 code part no. www.freescale.net.cn 5 / 6
tsop-6 tape and reel data tsop-6 carrier tape tsop-6 reel tsop-6 tape leader / trailer & orientation www.freescale.net.cn 6 / 6
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